DESIGN AND FABRICATION OF A HIGH TEMPERATURE PRESSURE SENSOR
Based on Silicon on Insulator (SOI) and Micro Electro Mechanical System (MEMS) technology, a single-crystal silicon piezoresistive strain gage was fabricated and constituted by silicon substrate, a thin SiO2 layer by Separation by Implantation of Oxygen (SIMOX), an optimized boron ion implantation doping layer photolithographed to discrete piezoresistors, stress matching Si3N4 layer, and metallization scheme of Ti/Pt/Au as beam lead layer for connecting piezoresistors to be Wheatstone bridge configuration. A special buried SiO2 layer with thethickness of 367 nm was fabricated by the SIMOX technology, which replaced p-n junction to isolate the piezoresistors from the bulk silicon substrate, so this kind of single-crystal silicon strain gage can be used in many harsh fields under high temperature up to 350 ℃. By the single-crystal silicon strain gage packaged on the metallic circular flat diaphragm, and along with other thermal treatments and compensating methods, a high temperature pressure sensor has been developed with the pressure range of 0~120 Mpa under high temperature above200 ℃. The testing results show that the sensor has good static performances under 200 ℃ and fine dynamic characteristics to meet the requirements of the modern industry, such as petroleum and chemistry, mobile industry, military industry, wind tunnels, materials processing.
SOI MEMS single-crystal silicon strain gage circular flat diaphragm high temperature pressure sensor harsh environment
Libo Zhao Yulong Zhao Zhuangde Jiang
State Key Lab for Manufacturing Systems Engineering, Institute of Precision Engineering, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an, China
国际会议
海南三亚
英文
2007-01-10（万方平台首次上网日期，不代表论文的发表时间）