DUAL LAYER PHOTORESIST AND BACK SPUTTERING APPLIED IN LIFT-OFF TECHNIQUE
Lift-off has been widely used in microfabrication process. In normal lift-off process, after photolithography and developing, a thin layer of residua will remain on the exposed substrate. To remove the residua, descum and back sputtering are required before metal sputtering. However, because of the high temperature of descum process and high energy induced by ion bombardment during back sputtering, the up inner angle of photoresist will increase in normal lift-off process. The metal films will deposit on the sidewall of the photoresist, and adhereto the substrate even after the photoresist removal. In order to overcome these problems, a lift-off process adopting dual layer photoresist is introduced in this paper, and high quality metallic pattern could be made.
back sputtering dual layer photoresist lift-off
Lu Zhang Le Zhang Ying Wang Zhenchuan Yang Guizhen Yan
Institute of Microelectronics, Peking University, Beijing 100871, China; Changchun University of Sc Institute of Microelectronics, Peking University, Beijing 100871, China
国际会议
海南三亚
英文
2007-01-10(万方平台首次上网日期,不代表论文的发表时间)