CHARACTERIZATION OF SURFACE LAYER OF SILICON WAFER BY USING NANO INDENTER
Mechanical properties of the silicon wafer are evaluated by a nano indenter system with the continuous stiffness measurement (CSM) technique. Contact stiffness, hardness and elastic modulus of the silicon wafer are continuously measured during the loading in an indentation test. The results show that when the contact depth is between 20 and 32 nm, its contact stiffness is linear with the contact depth, and its hardness and elastic modulus keep constant at 10.2 Gpa and 140.3 Gpa respectively, which belong to the oxide coating of the siliconwafer. When the contact depth is between 32 and 60 nm, its contact stiffness is not linear with the contact depth, and the hardness and elastic modulus increase rapidly with the contact depth, because they are affected by the bulk material. When the contact depth is over 60 nm, the contact stiffness of the silicon wafer is linear with the contact depth again, and the hardness and elastic modulus keep constant at 12.5 Gpa and 165.6 Gpa respectively, which belong to the silicon wafer, the bulk material.
Continuous stiffness measurement Silicon wafer Nanoindentation Mechanical properties Oxide coating
Yu-li Sun Dun-wen Zuo Yong-wei Zhu Feng Xu Min Wang
College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, China
国际会议
海南三亚
英文
2007-01-10（万方平台首次上网日期，不代表论文的发表时间）