THREE-DIMENSIONAL DISCHARGE SIMULATION OF INDUCTIVELY COUPLED PLASMA ETCHER

摘要：

Based on the commercial software, CFD-ACE+, a three-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature and the electron number density (END) of the argon plasma were simulated at 10 mTorr, 200 W and 200 sccm. One-dimensional distribution profiles of the plasma parameters above the wafer’s surface at different pressures and powers were compared. These results demonstrate that the END increases with both pressure and power. And the electron temperature decreases with pressure. The methods and conclusions can be used to provide some reference for the configurations of the chamber and the coil of the ICP equipment design and improvement and process parameters selection.

作者: CHENG Jia ZHU Yu DUAN Guanghong CHEN Yangying

作者单位: Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, People’s Republic of China

会议类型: 国际会议

会议名称: 2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

会议地点: 海南三亚

会议语种:英文

在线出版日期: 2007-01-10（万方平台首次上网日期，不代表论文的发表时间）