PROPERTIES OF NANOSIZED TIN OXIDE THIN FILM PREPARED BY REACTIVE MAGNETRON SPUTTERING

摘要：

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400 ℃ to 900 ℃. The results analyzed by X ray photoemission spectra (XPS),scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650 ℃ possesses better properties and suitable to be used in our gas sensor.

关键词： Tin oxide thin film sputtering

作者: Xiao Di Liu Dacheng Zhang

作者单位: Institute of Microelectronics Peking University Beijing, China P.R. 100086 Dacheng ZhangInstitute of Microelectronics Peking University Beijing, China P.R. 100086

会议类型: 国际会议

会议名称: 2007年微纳系统集成及其商业化应用国际学术会议(2007 International Conference & Exhibition on Integration and Commercialization of Micro and Nano-Systems)

会议地点: 海南三亚

会议语种:英文

在线出版日期: 2007-01-10（万方平台首次上网日期，不代表论文的发表时间）