A Low Temperature, Non-aggressive Wafer Level Hermetic Package with UV Cured SU8 Bond
In this paper, we present a new technique that could realize wafer level 3-D hermetic package in a very low bonding temperature(120°C) for MEMS (Micro–electro-mechanical Systems) devices. Microcavities were etched on a host glass wafer and were bonded with a carrier silicon wafer. MicroChem SU-8 photoresist is used as the intermediate adhesive layer between the host and carrier wafer. The devices were fabricated by self-aligning etching technique and were finally sealed by coating the structures with sputtered aluminum.Helium leak testing is carried out to verify the hermetic characteristics of the package, 99.7% of the tested devices were qualified. This technology shows a significant improvement of the hermeticity properties of adhesive bonded cavities, making it particularly suitable for applications on gas-tightness with low temperature,non-aggressive demands.
Yexian WU Guanrong TANG Jing CHEN
National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics,Peking University, Beijing 100871, China
国际会议
海南三亚
英文
2007-01-10(万方平台首次上网日期,不代表论文的发表时间)