Switching Voltage Transient Protection Schemes for IGBT Modules

摘要：

The application of high-power and faster switching IGBT modules has made it imperative for designers to look for ways of protecting these devices against detrimental switching voltage transients. This paper discusses protection design for both resistor capacitor diode (RCD) operation and resistor capacitor (RC) operation and also covers in detail some of the protection schemes. Index Terms-Insulated gate bipolar transistor (IGBT), protection circuit, resistor capacitor diode (RCD) snubber, resistor capacitor (RC) snubber, voltage overshoot.

作者: Zezhong XIA Wen LI Yuanzheng LI

作者单位: Institute of Automation, Wuhan University of Technology 430070, Wuhan, China

会议类型: 国际会议

会议名称: 第六届中国国际丝绸会议暨第二届国际纺织高层论坛(The 6th China International Silk Conference and The 2nd International Textile Forum)

会议地点: 苏州

会议语种:英文

页码: 198-200

在线出版日期: 2007-09-13（万方平台首次上网日期，不代表论文的发表时间）