Structure Characterization and Relaxation Processes of CB/HDPE Composites
In CB/HDPE composite, there exist two transitions with the increase of CB concentration. One is insulator-semiconductor transition; the other is semiconductor-conductor transition. Semiconductor- conductor transition is characterized by dynamic rheological measurements, which appears a plateau at low frequency. And insulator-semiconductor transition can be detected by dielectric analysis characterized by variation of AC conductivity with frequency due to different conductive mechanisms. At the same time, we attempted to study the relaxation processes in CB/HDPE composite by relaxation spectrum, calculated by the nonlinear Tikhonov regularization method from dynamic modulus. Due to the constrict of CB, the characteristic relaxation time of HDPE in HDPE/CB composite is longer than pure HDPE, whose characteristic relaxation time is about 0.8s. When the content of CB is above 12wt％, the characteristic relaxation time of HDPE doesnt appear within 100s.
Structure characteristic relaxation time CB
YU Ruobing HUANG Ren SHI Qingfeng CHEN Kaimin XU Shiai
School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
国际会议
上海
英文
277-278
2007-10-15（万方平台首次上网日期，不代表论文的发表时间）