Microstructure and electrical properties of CeO2 ultra-thin films for MFIS FeRAM applications

摘要：

A detailed investigation about the dependence of microstructure and electrical properties on annealing temperature was carried out for cerium oxide(CeO2) ultra-thin films (18 nm to 110 nm) on n-type Si(100) substrates by RF magnetron sputtering.Substrate temperature was kept constant at 400 for all samples.The as ∩ -deposited films were subsequently annealed in air ambient at 700,800 and 900 for 1 h respectively.The crystallinity and surface morphology of the CeO ∩ 2 films were analyzed with X-ray diffractometer(XRD),scanning electron microscope(SEM),atomic force microscope(AFM) and Raman scattering measurement.Electrical properties of the Au/CeO2/Si/Au structure were examined by high frequency capacitance—voltage (C—V) characteristics at 1 MHz and leakage current density—electric field (J—E) characteristics.A Raman peak of the CeO2 thin films was seen at 463 cm1.From C—V data,these films exhibit dielectric constants ranging from 18 to 23,the hysteresis width (VFB) ranging from 0.015 V to 0.12 V and the density of trapped charges ranging from 1.45】1011 to 3.01】1011 cm2.A leakage current of 4.75】108 9.0】107 A/cm2 at 2 MV/cm was observed.The experimental results show that the CeO2 buffer layers are suitable for non-volatile metal- ferroelectric-insulator-semiconductor(MFIS) structure field-effect-transistors(FETs) memory applications.

关键词： CeO2 thin film RF magnetron sputtering microstructure and electrical properties MFISFETs memory applications

作者: TANG Ming-hua ZHOU Yi-chun ZHENG Xue-jun WEI Qiu-ping CHENG Chuan-pin YE Zhi HU Zeng-shun

作者单位: Faculty of Materials and Optoelectric Physics,Xiangtan University,Xiangtan 411105,China;Key Laborato School of Materials Science and Engineering,Central South University,Changsha 410083,China

会议类型: 国际会议

会议名称: 2007年国际有色金属大会(International Conference of Nonfereous Materials 2007)(ICNFM)

会议地点: 长沙

会议语种:英文

在线出版日期: 2007-11-28（万方平台首次上网日期，不代表论文的发表时间）