Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco/Atlas
Metal-ferroelectric-insulator-silicon (MFIS) capacitors with Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film were simulated using a commercial software Silvaco/Atlas,and the effects of applied voltage and insulator layer on capacitance.voltage (C.V) hysteresis loops and memory windows were investigated.For the MFIS capacitors with CeO2 insulator,with the increase of applied voltage from 2 V to 15 V,the C.V loops become wider and memory windows increase from 0.15 V to 1.27 V.When the thickness of CeO2 layer increases from 1 nm to 5 nm at the applied voltage of 5 V,the C.V loops become narrower and the memory windows decrease from 1.09 V to 0.36 V.For MFIS capacitors with different insulator layers (CeO2,HfO2,Y2O3,Si3N4 and SiO2),the high dielectric constants can make the C.V loops wider and improve the capacitor’s memory window.The simulation results prove that Silvaco/Atlas is a powerful simulator for MFIS capacitor,and they are helpful to the fabrication of MFIS nonvolatile memory devices.
MFIS BNT ferroelectric thin film memory window Silvaco/Atlas
ZHENG Xue-jun ZHANG Jun-jie ZHOU Yi-chun TANG Ming-hua YANG Bo CHEN Yi-qiang
Faculty of Materials,Optoelectronics & Physics,Xiangtan University,Xiangtan 411105,China Key Laboratory of Low Dimensional Materials & Application Technology,Ministry of Education,Xiangtan
国际会议
2007年国际有色金属大会(International Conference of Nonfereous Materials 2007)(ICNFM)
长沙
英文
2007-11-28（万方平台首次上网日期，不代表论文的发表时间）