Effect of Cr doping on secondary phases and electrical properties of zinc oxide ceramic thick film varistors

摘要：

In order to get high-performance low voltage varistors,Cr2O3 doped ZnO ceramic thick films were fabricated by modified sol-gel process.The precursors were fabricated by dispersing doped-ZnO ceramic nano-powders in the sols,which were prepared by dissolving zinc acetate dihydrate into 2-methoxyethanol and stabilized by diethanolamine and glacial acetic acid and doped with a concentrated solution of bismuth nitrate,phenylstibonic acid,cobalt nitrate,manganese acetate and chromium nitrate.The results show that ZnCr2O4 phase can form in ZnO based ceramic films doped 1.0％ (mole fraction) Cr2O3.Three secondary phases,such as Bi2O3,Zn7Sb2O12,and ZnCr2O4 phases,are detected in the thick films.The Raman spectra show that the intensity and the position of Raman bands of Zn7Sb2O12 and ZnCr2O4 phases change obviously with increasing Cr2O3 doping.The nonlinearity coefficient α of ZnO thick films is 7.0,the nonlinear voltage is 6 V,and the leakage current density is 0.7 μA/mm2.

关键词： sol-gel processs thick films ZnO secondary phases low voltage varistors

作者: JIANG Sheng-lin ZHANG Hai-bo XIE Tian-tian FAN Mao-yan ZENG Yi-ke Lü Wen-zhong

作者单位: Engineering Research Centre for Functional Ceramics,Department of Electrical Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China

会议类型: 国际会议

会议名称: 2007年国际有色金属大会(International Conference of Nonfereous Materials 2007)(ICNFM)

会议地点: 长沙

会议语种:英文

在线出版日期: 2007-11-28（万方平台首次上网日期，不代表论文的发表时间）