Aluminum doping and dielectric properties of silicon carbide by CVD
(0) Cubic β-SiC coating was grown onto the graphite substrate by the normal pressure chemical vapor deposition using CH3SiCl3 (MTS) as a source precursor at 1 150 ℃.But the hexagonal Al4SiC4 phase was generated in the doped process with trimethylaluminium (TMA) as the dopant.Microstructure of the deposit coating as-prepared was characterized by scanning electron microscope (SEM),which consists of spherical particles with a very dense facet structure.The real component of permittivity ε′ and dielectric loss tanδ of the coatings undoped and doped by TMA were carried out by a vector network analyzer in the microwave frequency ranges from 8.2 GHz to 12.4 GHz.The results show that both of them have low values,and doped coating has lower ε′ and tan δ than undoped one due to the existence of Al4SiC4 impurity phase,which indicates that the desired Al/SiC solid solution at 1 150 ℃ in a normal argon atmosphere is not produced.
silicon carbide aluminum doping dielectric properties chemical vapour deposition
LI Zhi-min SU Xiao-lei LUO Fa ZHU Dong-mei ZHOU Wan-cheng
State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,China
国际会议
2007年国际有色金属大会(International Conference of Nonfereous Materials 2007)(ICNFM)
长沙
英文
2007-11-28（万方平台首次上网日期，不代表论文的发表时间）