Vacuum distillation refining of metallurgical grade silicon (Ⅱ) ——Kinetics on removal of phosphorus from metallurgical grade silicon

摘要：

The kinetics on vacuum refining process of metallurgical grade silicon was studied using maximum evaporation rate,critical pressure and mean free path of phosphorus in the metallurgical grade silicon at different temperatures.The behaviors of impurity phosphorus in the vacuum distillation process were examined in detail.The results show that the fractional vacuum distillation should be taken to obtain silicon with high purity.Impurity phosphorus volatilize with the maximum evaporation rate of 1.150×105 1.585×106 g/(cm2·min) in the temperature range of 1 0732 173 K and the pressure below 2.1 Pa.Because the value of ωmax,P is at least 108 times of ωmax,Si,Si hardly evaporates and remains in the residual,which indicates that phosphorus can be removed from metallurgical grade silicon (MG-Si) completely.

关键词： metallurgical grade silicon solar grade silicon vacuum distillation kinetics phosphorus removal

作者: MA Wen-hui WEI Kui-xian YANG Bin LIU Da-chun DAI Yong-nian

作者单位: National Engineering Laboratory for Vacuum Metallurgy,Faculty for Materials and Metallurgical Engineering,Kunming University of Science and Technology,Kunming 650093,China;Laboratory of Vacuum Metallurgy of Non-ferrous Metals of Yunnan Province,Kunming 65

会议类型: 国际会议

会议名称: 2007年国际有色金属大会(International Conference of Nonfereous Materials 2007)(ICNFM)

会议地点: 长沙

会议语种:英文

在线出版日期: 2007-11-28（万方平台首次上网日期，不代表论文的发表时间）