Modeling Study of InSb Thin Film For Advanced Ⅲ-V MOSFET Applications

摘要：

Band structure of Ⅲ-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the г valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and △ valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the effective mass of г valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using Non-Equilibrium Greens Function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n- MOSFET in the ballistic limit of these devices.

作者: Z. G. Zhu Tony Low M. F. Li W. J. Fan P. Bai D. L. Kwong G. Samudra

作者单位: Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore Institute of Microe School of EEE, Nanyang Technological University of Singapore Institute of High Performance Computing, Singapore Institute of Microelectronics, Singapore

会议类型: 国际会议

会议名称: 2007年纳米电子器件研讨会(Nano-Electron Device Workshop)

会议地点: 北京

会议语种:英文

页码: 42-45

在线出版日期: 2007-07-23（万方平台首次上网日期，不代表论文的发表时间）