High-Performance Nano-Schottky Diodes and Nano-MESFETs Made on Single CdS Nanobelts
Nano-Schottky diodes and nanometal-semiconductor field-effect transistors (MESFETs) on single CdS nanobelts (NBs) have been fabricated and studied. The Au/CdS NB Schottky diodes have very low reverse current density (~3.0×10<-5> A·cm<-2> at -10V reverse bias) and the highest on/off current ratio (~10<8>) reported so far for nano-Schottky diodes. The single CdS NB MESFETs exhiblt n- channel normally on (depletion) mode, low threshold voltage (~-1.55 V), high transconductance (~3.5μS), low subthreshold swing (~ 45mV/dec), and the highest on/off current ratio (~2×10<6>) reported so far for nanofield-effect transistors. We also show that the absolute value of threshold voltage for a metal-Insulator- semiconductor field-effect translstor made on a single CdS NB can be reduced from ~12.5 to ~0.4V and its transconductance can be increased from~0.2 to~3.2μS by adding an extra Au Schottky contact on the CdS NB, the mechanism of which Is discussed.
Ren-Min Ma Lun Dai Guo-Gang Qin
School of Physics, Peking University, Beijing 100871, China. State Key Lab for Mesoscopic Physics, P School of Physics, Peking University, Beijing 100871, China. State Key Lab for Mesoscopic Physics, P
国际会议
2007年纳米电子器件研讨会(Nano-Electron Device Workshop)
北京
英文
314-319
2007-07-23（万方平台首次上网日期，不代表论文的发表时间）