Improvement of electrical characteristics of fluorinated perylene diimide thin-film transistors by gate dielectric surface treatment
The structural and electrical properties of n-channel OTFTs based on N,N-(4-monofluorophenyl)-3,4,9,10-perylene tetracarboxylic diimide (D4MFPP) were investigated. The influence of surface treatment on the mobilityand the interface traps were quantitatively evaluated.
Li-Gong Yang Jia-Chi Huang Rong-jin Li Min-Min Shi Yan Gao Mang Wang Wen-Ping Hu Hong-Zheng Chen
Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China;Zh Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100086, P. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
国际会议
2007年亚洲光纤通讯与光电博览会及研讨会(Asla Optical Fiber Communication & Optoelectronic Exposition & Conference)
上海
英文
2007-10-17(万方平台首次上网日期,不代表论文的发表时间)