An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser

摘要：

An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser. The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet.

作者: Huan Wang Hongliang Zhu Yuanbing Cheng Dingbo Chen Wei Zhang Liesong Wang Yunxiao Zhang Yu Sun Wei Wang

作者单位: State Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials, CAS Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, P. R. China

会议类型: 国际会议

会议名称: 2007年亚洲光纤通讯与光电博览会及研讨会(Asla Optical Fiber Communication & Optoelectronic Exposition & Conference)

会议地点: 上海

会议语种:英文

在线出版日期: 2007-10-17（万方平台首次上网日期，不代表论文的发表时间）