The annealing process of R.F. magnetron sputtered ZnO:Al films

摘要：

The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10 -3 Ω ·cm was obtained in the condition of vacuum annealing at 220 ℃.

作者: YU Zhinong XU Jin XUE Wei LI Jinwei

作者单位: Department of optical Engineering, School of Information Engineering, Beijing Institute of Technolog Beijing Institute of Technology

会议类型: 国际会议

会议名称: 2007年亚洲光纤通讯与光电博览会及研讨会(Asla Optical Fiber Communication & Optoelectronic Exposition & Conference)

会议地点: 上海

会议语种:英文

在线出版日期: 2007-10-17（万方平台首次上网日期，不代表论文的发表时间）