Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures

摘要：

Formation, propagation and length of crack and hardness of single silicon wafer were investigated at different temperatures by means of Vickers indentation, using lower temperature testing unit with semiconductor refrigerating chip and higher temperature testing unit with closed electric furnace. The results show that the hardness of single silicon wafer decreases with the increase of temperature, while the length of crack increases with the increase of temperature. Ductile-brittle transition of the single silicon wafer can occur at different temperatures with the increase of load. When the load is smaller and temperature is lower, no cracks can be found.

关键词： Temperature Single silicon wafer Brittle-ductile transition Hardness Length of crack

作者: Yuli Sun Dunwen Zuo Yongwei Zhu Duosheng Li Mei Qi Min Wang

作者单位: College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics Natural Science Institute, Shandong University of Science & Technology, Qingdao, China

会议类型: 国际会议

会议名称: 第14届全国磨粒技术学术会议(14th Conference of Abrasive Technology in China)

会议地点: 南京

会议语种:英文

页码: 1-5

在线出版日期: 2007-10-26（万方平台首次上网日期，不代表论文的发表时间）