Influences of Machining Parameters on Silicon Wafer Polished with Gel-coupled Ultra-Fine Abrasive Polishing Pads

摘要：

In this paper, a newly developed ultra-fine abrasive polishing pad by gel technology was adopted to polish silicon wafer on a nano-polishing machine. In order to evaluate the machining performances of the polishing pad, the influences of abrasive sizes, abrasive concentration and polishing parameters (pressure, rotating speed and machining time) on the silicon wafer were investigated respectively. Optical microscope and ZYGO 3D surface analyzer were applied to examine the surface morphologies and surface roughness of the polished silicon wafer respectively. The experimental results showed that the surface roughness of silicon wafer decreased with the decreasing of abrasive grits and the increasing of abrasive concentration and polishing parameters (pressure, rotating speed and polishing time) when polishing silicon wafer with the polishing pad containing Al<,2>O<,3> abrasive. When abrasive concentration, polishing pressure and polishing time reached certain values, few changes would happen for the silicon wafer.

关键词： Ultra-fine Abrasive Polishing Pad Gel Technique Silicon Wafer

作者: Juan Liu Xipeng Xu

作者单位: Key Research Lab for Stone Machining, Huaqiao University, Quanzhou, Fujian, China, 362021

会议类型: 国际会议

会议名称: 第14届全国磨粒技术学术会议(14th Conference of Abrasive Technology in China)

会议地点: 南京

会议语种:英文

页码: 279-284

在线出版日期: 2007-10-26（万方平台首次上网日期，不代表论文的发表时间）