Investigation on Initial Growth of Er2O3 Films on Si (001)

摘要：

The epitaxial growth of Er<,2>O<,3> films has been achieved on Si (001) substrates by MBE at the growth temperature of 700℃ in an oxygen pressure of 7×10-6 Torr. Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er<,2>O<,3> films on Si in O<,2> pressures of 7×10-6 Torr. An interface layer was observed at the initial growth of Er<,2>O<,3> film on Si even at room temperature, which is supposed to be attributed to the effect of the Er atom catalvtic oxidation effect. With the film growth process continued, oxygen deficient Er oxide will capture oxygen from the interface laver which is formed inevitably at the initial growth of Er<,2>O<,3> film and thus reduce and even remove the interface layer if the condition of O<,2> pressure is a little insufficient at a high substrate temperature.

关键词： gate dielectric high k oxides rare earths

作者: Zhu Yanyan(朱燕艳) Fang Zebo(方泽波) Liao Can(廖灿) Chen Sheng(陈圣) Xu Run(徐闰)

作者单位: Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China Surface Physics Laboratory (National Key Laboratory),Fudan University, Shanghai 200433, China Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 第五届国际稀土开发与应用研讨会(The Fifth International Conference on Rare Earth Decelopment and Applicatin)

会议地点: 包头

会议语种:英文

页码: 314-317

在线出版日期: 2007-08-07（万方平台首次上网日期，不代表论文的发表时间）