Fabrication and Luminescence Properties of Eu<3+> Doped SiO<,2> Thin Films

摘要：

Rare earth doped silica films were prepared by sol- gel method accompanied with the spin-coating process. It was found that the photoluminescence (PL) property of the thin films was dependent strongly on the doping amount of Eu<3+>. For thin films annealed at 700 ℃, the PL intensity increased constantly as elevating the doping amount up to 10％ without any evident concentration quench, which indicated the good doping property of the SiO<,2> matrix. In order to further improve the PL efficiency, co-doping of Tb3<3+> into SiO<,2>: Eu<3+> thin films were also investigated. It was found that the lumi-nescence intensity was obviously enhanced by co-doping which could be explained in terms of the effective energy transfer from Tb<3+> to Eu<3+>

关键词： rare earth dope SiO<,2> thin films energy transfer co-doping

作者: WanNeng(万能) LinTao (林涛) WangTao (王涛) XuJun (徐骏) Li Wei(李伟) Xu Ling (徐岭)

作者单位: National Laboratory of Solid State Microstructures and Department of Physics, Nanfing University, Na National Laboratory of Solid State Microstructures and Department of Physics, Nanfing University, Na

会议类型: 国际会议

会议名称: 第五届国际稀土开发与应用研讨会(The Fifth International Conference on Rare Earth Decelopment and Applicatin)

会议地点: 包头

会议语种:英文

页码: 330-333

在线出版日期: 2007-08-07（万方平台首次上网日期，不代表论文的发表时间）