Sm3+: SiO2 Optical Thin Film Prepared by Sol-Gel Process
Sm<3+>: SiO<,2> thin film with high concentration of Sm<3+> was prepared by sol-gel method using tetraethoxysilane (TEOS) as precursor and using the appropriate system of hydrolyzing-condensing and organic additives, and controlling the velocity of promoting temperature during the heat treatment. Research was done on the luminescence spectra of the gel with different concentrations of Sm<3+> by fluorescence spectra analysis. The results showed that, the emission intensity of Sm<3+> became stronger with increasing the doping concentration when the concentration was below 10％ in the gel; the optimum excitation wavelength of Sm<3+> in the gel was 473 nm, the emission peak position were at 561, 594, 643, 703 nm, which was caused from, respectively, <4>G<,5/2> - <6>H<,5/2>, <4>G<,5/2>- <6>H<,7/2>, <4>G<,5/2> - <6>H<,9/2>, <4>G<,5/2> - <6>H<,ll/2> transition of Sm<3+>; and the emission intensity of the gel with organic additive DMF was elevated evidently.
Sm<3+>: SiO<,2> thin film sol-gel method luminescence properties rare earths
Tan Weimin (谭伟民) Lu Chunhua (陆春华) Zhang Yan (张焱) Ni Yaru(倪亚茹) Xu Zhongzi (许仲梓)
College Of Materials Science and Engineering, Nanjing University Of Technology, Nanjing 210009, China
国际会议
第五届国际稀土开发与应用研讨会(The Fifth International Conference on Rare Earth Decelopment and Applicatin)
包头
英文
334-337
2007-08-07（万方平台首次上网日期，不代表论文的发表时间）