Effects of the In<,0.1>Ga<,0.9> As Strained Layer on Structures and Spectra of InAs Self-assembled Quantum Dots
Four types of InAs self-assembled Quantum dots (QDs) grown on GaAs (100) semi-insulating substrates were prepared by molecular beam epitaxy (MBE). The influence of the thin In<,0.1>Ga<,0.9>As layer (5nm) before depositing InAs self-organized QDs was experimentally investigated. AFM measurements show that In<,0.1>Ga<,0.9>As strained layer can release the strain between wetting layer (WL) and quantum dots, and then enlarge size of quantum dots. When the thickness of InAs layer is small, the quantum dots are chained which leads to a large red-shift of the 1.3μm photoluminescence peak. We study systematically the dependence of photoluminescence (PL) lifetime on the QDs size, density and temperature (T). T-dependent PL measurements indicate that the PL peaks of InAs quantum dots with In<,0.1>Ga <,0.9As show red-shift compared with the quantum dots directly deposited on GaAs matrix. We also observe that the PL lifetime of quantum dots increases till a temperature point T<,C>, and then decrease with temperature. The values of T<,C> are related with In<,0.1>Ga<,0.9>As strained layer and the thickness of InAs. The PL lifetime of quantum dots with In<,0.1>Ga<,0.9>As strained layer is less than those without In<,0.1>Ga<,0.9>As strained layer, which implies that In<,0.1>Ga<,0.9>As strained layer may accelerate transmission of carriers through WL.
In<,0.1>Ga<,0.9>As strained layer self-organized quantum dots time-resolved photoluminescence
Lingmin Kong Jianming Yao Yibing Deng Zhengyun Wu Zhechuan Feng
Marine Science & Technology College, Zhejiang Ocean University, China Department of Physics, Xiamen University, Xiamen, China Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, Nationall
国际会议
2006现代科技国际研讨会(The International Workshop on Modern Science and Technology in 2006)
北京
英文
347-352
2006-04-01（万方平台首次上网日期，不代表论文的发表时间）