Cubic SiC Grown on Si substrate by Chemical Vapor Deposition: Optical Characterization
A series of 3C-SiC films with varied film thickness up to 17μm have been grown on Si (100) by Chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (<3μm) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (> 10μm) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b.
3C-SiC Si chemical vapor deposition photoluminescenc Raman scattering Fourier transform infrared spectroscopy
Zhechuan Feng Zhengyun Wu
Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National T Department of Physics, Xiamen University, Xiamen, China
国际会议
2006现代科技国际研讨会(The International Workshop on Modern Science and Technology in 2006)
北京
英文
450-455
2006-04-01（万方平台首次上网日期，不代表论文的发表时间）