Analysis of High Voltage LDMOS Power Consumption

摘要：

According to the high voltage LDMOS macromodel established in previous work, the inverter consists of LDMOS with high resistance drift region was analyzed. A formulation was presented to solve the power consumption of LDMOS power integrated circuits. The results are shown in good agreement with the simulation values by the two-dimensional numerical simulator MEDICI. Finally, a method to reduce circuit power consumption was presented

作者: Xiu-long WU Jun-ning CHEN Dao-ming KE

作者单位: Anhui University, China

会议类型: 国际会议

会议名称: 2nd IEEE Conference on Industrial Electronics and Applications(ICIEA 2007)(第二届IEEE工业电子与应用国际会议)

会议地点: 哈尔滨

会议语种:英文

在线出版日期: 2007-05-23（万方平台首次上网日期，不代表论文的发表时间）