Mass Production of Advanced Nanostructures for Optoelectronic Applications

摘要：

To address the challenges of solid-state white lighting we have developed two designated metal-organic vapor phase epitaxy (MOVPE) mass production systems, the CRIUS(R) close-coupled showerhead (CCS) and AIX 2800G4 HT Planetary Reactor(R) tools with capacities of 30×2 inch and 42×2 inch, respectively. Uniformity over all wafers in a run of layers emitting in the blue spectral range was below 1 nm standard deviation on wafer and ±0.85 nm from wafer to wafer. Previous work on silicon (Si) and lithium aluminate (LiAlO2) in an R&D reactor have shown the capability of these substrates for the GaN-based epitaxy and their impact for the mass production. Si is a low cost substrate and can be seen as an alternative to sapphire and silicon carbide (SiC). LiAlO2 offers the possibility for the growth of m-plane GaN. These layers are free of polarization fields in growth directions.

作者: Y.Dikme B.Schineller M.Heuken

作者单位: AIXTRON AG, Kackertstr.15-17, 52072 Aachen, Germany

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 76-79

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）