The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN

摘要：

By epitaxy of a thin p-InGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.

作者: Yanjun Han Zhongtao Liu Yi Luo Hongxia Ma Xianpeng zhang Lai Wang

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China, 100084

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 114-115

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）