Epitaxial Ⅲ-Ⅴ Nanowires on Lattice-Mismatched Substrates by MOCVD

摘要：

We experimentally determined critical diameters (CDs) of epitaxial nanowires (NWs) grown on latticemismatched substrates by MOCVD. The CD was found to be inversely dependent on lattice mismatch. For InP NWs on Si, quantization effect and narrow linewidth were observed for the micro-photoluminescence (μ-PL) measurement.

作者: Linus C.Chuang Michael Moewe Shanna Crankshaw Chris Chase Connie Chang-Hasnain

作者单位: Department of Electrical Engineering and Computer Sciences and Applied Science & Technology Group University of Califomia, Berkeley, California 94720

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 120-121

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）