Effects of Ⅴ/Ⅲ Ratios on the Shape and Optical Properties of InP Nanowires Grown on Si Substrates

摘要：

We report the effect of varying the MOCVD gas precursor Ⅴ/Ⅲ ratios on the structural and optical properties of InP nanowires grown on (111)Si susbstrates. We show record narrow photoluminescence linewidths for optimal ratios.

作者: Michael Moewe Linus C.Chuang Shanna Crankshaw Chris Chase Connie Chang-Hasnain

作者单位: Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Be Applied Science & Technology Group, University of California at Berkeley, Berkeley, California 94720

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 130-131

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）