Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

摘要：

Microstructure evolution in MOVPE-grown GaN with different low-temperature-buffer annealing time was investigated. Low-temperature-buffer annealing process was found to effectively modulate the in-plane and out-of-plane misorientation of mosaic blocks, and simultaneously diminish the in-plane crystallite size.

作者: Hongtao Li Yi Luo Lai Wang Guangyi Xi Yang Jiang Wei zhao Yanjun Han

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 132-133

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）