Annealing effect on spectral linewidth of hexagonal gallium nitride quantum dots

摘要：

We report microphotoluminescence studies of single GaN/AIN QDs. By annealing, an average of spectral linewidth of GaN QDs became narrower from 13.5 to 8.8 meV. This suggests that the defects in the vicinity of GaN QDs can be reduced by reconstruntion.

作者: Takeshi Kawano Satoshi Kako Christian Kindel Yasuhiko Arakawa

作者单位: RCAST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan;INQIE, The university of Tokyo INQIE, The university of Tokyo RCAST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan;IIS;INQIE, The university of Tokyo

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 146-147

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）