Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED

摘要：

The effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED was investigated. The tunneling recombination and the Mg diffusion models were used to explain the optimized Mg concentration.

作者: Lai Wang Yi Luo Jiaxing Wang Hongtao Li Guangyi Xi Yang Jiang Changzheng Sun Yanjun Han

作者单位: State Key Laboratory on Integrated Optoelectronics / Tsinghua National Laboratory for Information Science and Technology, Department of Electrical Engineering, Tsinghua University, Beijing 100084, China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 156-157

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）