Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells

摘要：

A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.

作者: Chih-Feng Lu Chi-Feng Huang Dong-Ming Yeh Yung-Sheng Chen Wen-Yu Shiao C.C.Yang

作者单位: Graduate Institute of Electro-Optical Engineering, National Taiwan University, 1, Roosevelt Road, Section 4, Taipei, Taiwan

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 182-183

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）