Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si
We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111)silicon substrate. The decay characteristics can be explained through the effects of surface states.
Shanna Crankshaw Stephan Reitzenstein Linus C.Chuang Michael Moewe Steffen Münch Carolin Hofmann Alfred Forchel Connie Chang-Hassnain
Applied Science & Technology group and Department of Electrical Engineering and Computer Sciences, U Technische Physik, Universitat Würzburg Am Hubland, Würzburg, Germany, D-97404
国际会议
兰州·北京
英文
190-191
2007-07-29(万方平台首次上网日期,不代表论文的发表时间)