The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

摘要：

The parameters of nanostructure on p-GaN surface for light extraction efficiency of GaN based LEDs were studied by using Monte-Carlo ray tracing simulation, and nanostructures were fabricated by using interferential exposure and ICP dry etching.

作者: Xian-Peng Zhang Yan-Jun Han Yi Luo Xiao-Lin Xue Jin Huang

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing P.R.China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 226-227

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）