Room Temperature Inductively Coupled Plasma Etching of InP-Based Semiconductors Using Cl2/N2 and Cl2/N2/Ar Mixtures

摘要：

Room temperature etching of InP is carried out using Cl2/N2 and Cl2/N2/Ar inductively coupled plasma (ICP).The surface roughness and anisotropy obtained with different etching conditions are presented.

作者: Qiwei Zhou Changzheng Sun Jian Wang Bing Xiong Yi Luo

作者单位: State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084 P.R.China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 230-231

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）