Sidewall smoothing of Si/SiO2 waveguide by excimer laser reformation

摘要：

Smoothing as-etched Si/SiO2 waveguides by laser illumination results in less damage than furnace-treated one and atomic-force-microscopy measurement on the reformed surface gives root-mean-square roughness of 0.24 nm and leads to 0.04 dB/cm of calculated scattering loss.

作者: Shih-Che Hung Eih-Zhe Liang Ching-Fuh Lin

作者单位: Graduate Institute of Electro Optical Engineering, National Taiwan University No.1, Sec.4, Roosevelt Department of CSIE, Diwan College of Management, Tainan, Taiwan, R.O.C.

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 248-249

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）