Influence of low-Ⅴ/Ⅲ intermediate layer on GaN grown on patterned sapphire substrate by MOVPE

摘要：

By inserting a low-Ⅴ/Ⅲ intermediate layer between bulk GaN and initial growth layer, the crystal quality of GaN grown on patterned sapphire substrate (PSS) by MOVPE was improved, which can be explained by dislocation bending mechanism.

作者: Yang Jiang Yi Luo Lai Wang Hongtao Li Guangyi Xi Wei zhao Yanjun Han

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 250-251

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）