ITO/AIN/AI Ohmic contact for p-GaN with high reliability and optical reflectivity

摘要：

ITO/AIN/AI scheme is proposed as ohmic contact to p-GaN with high reliability and optical refiectivity. The LEDs with ITO/AIN/AI contact exhibited better thermal stability, electrical and optical performance than ITO/AI and Agbased ones.

作者: Hongxia Ma Yanjun Han Yi Luo

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing, China, 100084

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 258-259

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）