Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

摘要：

Steady state and time-resolved photoluminescence (TRPL) of InGaN/GaN quantum well (QW) samples grown by MOCVD is investigated. The carrier competition between QW peak and yellow band can be generally explained by the effect of indium concentration in InGaN/GaN QWs.

作者: Fan Ren Changzheng Sun Yanjun Han Zhibiao Hao Yi Luo

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Tsinghua University,Beijing 100084 P.R.China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 270-271

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）