Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes
Temperature-dependent electroluminescence (EL) spectra of 1 mm× 1 mm InGaN/GaN MQWs blue LED was investigated. The enhancement of the tunneling-recombination is found to be the key mechanism for the results.
Wei Zhao Xiang Fei Jun Ma Yi Luo
State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
国际会议
兰州·北京
英文
274-275
2007-07-29(万方平台首次上网日期,不代表论文的发表时间)