Temperature dependence of gain characteristics in p-doped 1.3-μm InAs quantum dot laser

摘要：

We report the measured temperature dependence of gain characteristics in p-doped 1.3-μm quantum-dot lasers and indicate the relationship between their temperature-stability around room temperature and behavior of holes at the ground-state supplied by p-doping.

作者: T.Yukutake M.Ishida N.Hatori H.Sudo T.Yamamoto Y.Nakata H.Ebe M.Sugawara Y.Arakawa

作者单位: Research Center for Advanced Science and Technology Institute for Nano Quantum Information Electronics Fujitsu Ltd. Fujitsu Ltd.;Fujitsu Laboratories Ltd.;Optoelectronic Industry and Technology Development Associatio Research Center for Advanced Science and Technology;Institute for Nano Quantum Information Electroni

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 284-285

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）