Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry

摘要：

The uniformities of AlGaN/GaN HEMT structures grown by MOVPE have been studied by using spectroscopic ellipsometry. The results show that the total flow rate is the most critical growth parameter for the uniformity.

作者: Guangyi Xi Yi Luo Lai Wang Hongtao Li Yang Jiang Dong Chen Wei Zhao Yanjun Han Zhibiao Hao

作者单位: State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

会议类型: 国际会议

会议名称: 2007年纳米光电子学国际学术会议

会议地点: 兰州·北京

会议语种:英文

页码: 292-293

在线出版日期: 2007-07-29（万方平台首次上网日期，不代表论文的发表时间）