Research on Parametric Drift in ESD-injected Silicon Dynatron Transistors

摘要：

Currently, with the extensive application ofelectronic devices and systems, the interests in ESD failure in electronic devices had mushroomed rapidly. There were many approaches to analysis static failures. The electronic parametric measurement was the most common approach for parts detection. With high-frequency low-noise Silicon dynatron transistors, in order to find the most sensitive parameter of ESD damage/failure, nearly all the normal electrical characteristics were measured and compared before and after ESD injection. By statistic and analysis, it was observed that saturation falloff, forward break-over voltage, correlated power gain, noise figure and junction capacitance were not sensitive to ESD, reverse breakdown voltages and cutoff currents were more sensitive. Especially, VBRCEO and ICEO of high-frequency low-noise Silicon dynatron transistors were the most sensitive to ESD injection.

关键词： Silicon bipolar transistor ESD damage parametricdrifts reverse breakdown voltage cutoff current

作者: Yang Jie Liu Shanghe Yuan Qingyun Sun Guozhi

作者单位: Electrostatic and Electromagnetic Protection Institute,Shijiazhuang Mechanical Engineering College,Shijiazhuang 050003,China

会议类型: 国际会议

会议名称: 第八届国际电子测量与仪器学术会议(Proceedings of 2007 8th International Conference on Electronic Measurement & Instruments)

会议地点: 西安

会议语种:英文

在线出版日期: 2007-08-16（万方平台首次上网日期，不代表论文的发表时间）