A Novel Method to Estimate Current Leakage of Laser Diodes

摘要：

The low frequency noise (LFN) properties are investigated on the high power 808nm InGaAsP/GaAs quantum well (QW) laser diodes under low bias current (10 -6 ~10 -3 A) in order to estimate the current leakage of semiconductor lasers. For the first time, we investigate the LFN peak under very low bias current. After a short time electrical aging (50 or 150 hours), the right-shifted position of the LFN peak and annealing effect are observed. An equivalent circuit model considering of parallel shunt path is employed to interpret these experimental results. It is concluded that LFN peak under low injected current is sensitive to the mechanisms of microscopic current leakage, and can be used as an indicator of reliability of laser diodes.

关键词： laser diode current leakage reliability low frequency noise noise peak nondestructive test

作者: Zhang Shuang Guo Shuxu Gao Fengli

作者单位: College of Electronic Science and Engineering,Jilin University,Changchun 130012,China

会议类型: 国际会议

会议名称: 第八届国际电子测量与仪器学术会议(Proceedings of 2007 8th International Conference on Electronic Measurement & Instruments)

会议地点: 西安

会议语种:英文

在线出版日期: 2007-08-16（万方平台首次上网日期，不代表论文的发表时间）