Breakdown Voltage Analysis of SOI LDMOS with Step Buried Oxide

摘要：

On the basis of analyzing SOILDMOS structurewith step buried oxide, the modulation effect of SOILDMOS step buried field plate on surface electric field of drift region is analyzed, according to modulation theory of field plate on surface electric field. Besides, the effects of step buried oxide thickness and step number on breakdown voltage are also simulated and optimized by ISE. When buried oxide step number is 3 and step thickness is in the range of 0.8 μm—1.2 μm, surface electric field distribution is nearlyuniform, breakdown point moves into body form surface, and breakdown voltage of SBOSOI is improved by 30％, compared to conventional SOI device, which provides a practical application conclusion for the design of SOILDMOS device.

关键词： SOI Breakdown Voltage step buried oxide electric field modulation

作者: An Tao Gao Yong

作者单位: Xian University of Technology,Xian 710048 China

会议类型: 国际会议

会议名称: 第八届国际电子测量与仪器学术会议(Proceedings of 2007 8th International Conference on Electronic Measurement & Instruments)

会议地点: 西安

会议语种:英文

在线出版日期: 2007-08-16（万方平台首次上网日期，不代表论文的发表时间）