Optical interferometry Endpoint Detection for Plasma Etching

摘要：

The optical interferometry is a non-invasive plasma diagnostic method.Etch experiment were carried out in a high density plasma etching tool (ICP).The theoretic model for optical interferometric endpoint detection and prediction in plasma etching are presented.It is observed that the optical properties of oxide layer and polysilicon layer can affect the interferometric signals.The endpoint algorithm and real time plasma parameters diagnostics are discussed,then process control with optical interferometry during the poly-silicon etch is described.The endpoint prediction technique has been applied to poly-silicon gate etching in high density plasma etching tools.

关键词： optical interferometry plasma etching endpoint detection theory model process control

作者: Wang Wei Lan Zhongwen Wen Wu Gong Yungui

作者单位: College of Electronics Engineering,Chongqing University of Posts and Telecommunication,Chongqing 400 College of Microelectronics and Solid State Electronics,UESTC,Chengdu,610054 China Chongqing Chongyou Information Technology Co.LTD,Chongqing,400065 China

会议类型: 国际会议

会议名称: 第八届国际电子测量与仪器学术会议(Proceedings of 2007 8th International Conference on Electronic Measurement & Instruments)

会议地点: 西安

会议语种:英文

在线出版日期: 2007-08-16（万方平台首次上网日期，不代表论文的发表时间）