Electroless NiMoP Thin Film Deposition on Si/SiO2
NiMoP is one of the most important barrier layers for Cu interconnection. A pretreatment for initiating electroless plating on Si/SiO2 based on palladium ion grains chemisorption on self-assembled monolayers (SAMs) of amidogen of silane coupling agent has been developed. The process and properties of electroless plating NiP/NiMoP compound thin films on Si/SiO2 substrate have been investigated. When concentration ratios of MoO42-/Ni2+ is at 0.02～0.1, atom percent of phosphoric in NiMoP layer is about 4％, and the NiMoP film has typical mixed-crystal structure consist of the crystal Ni phase and the non-crystal Mo phase. The grain size is about 50nm. The NiMoP film has diffusion barrier effect at high temperatures up to 400℃. The adhesion with the surface of SiO2/Si can be improved obviously by adding NiP transition layer and 200℃ annealing treatment in nitrogen atmosphere.The NiP/NiMoP compound thin films exhibit high integrality and uniformity, good neatness degree, low surface roughness, strong adhesion and low resistivity. In all, NiMoP barrier layer has a potential use for preventing copper-tosilicon diffusion for the application of 3D packaging with TSVs.
Qiang Ling Jian Cai Shuidi Wang Huiyou Zhao
Department of Material Science and Engineering, China University of Mining and Technology, Beijing, Institute of Microelectronics, Tsinghua University, Beijing, 100084, China
国际会议
第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)
上海
英文
416-420
2007-08-14（万方平台首次上网日期，不代表论文的发表时间）