Study the Effects of the Doped-B Atom on Silicon Nanodot

摘要：

Based on the first principles calculations, the effects of the doped-B atom on the electrical conductance of silicon nanodots device has been studied. The results show that the doped-B atom existing in the quantum dot will shift the peak of transmission coefficient and result in a small change of peak value. And thus it will deteriorate the electronic conductance for low bias voltage

关键词： electrical conductance nanodot dope

作者: Z.O.Wang L.F.Mao

作者单位: School of Elctronics & Information Engineering, Soochow University,178 Gan-jiang East Road, Suzhou 215021 P.R.China

会议类型: 国际会议

会议名称: 第八届电子封装技术国际会议(2007 8th International Conference on Electronics Packaging Technology ICEPT2007)

会议地点: 上海

会议语种:英文

页码: 518-520

在线出版日期: 2007-08-14（万方平台首次上网日期，不代表论文的发表时间）